Characterisation: Dopant Concentration Monitoring Tool @ C5

"What is it?
This is a Hg-probe CV measurement system for blanket wafer tests

Manufacturer: MDC

Model Name: Model 802-200

Applications: SiC drift layer concentraion estimation in SiC epilayers, GaN HEMT carrier concentration profile

Instrument Overview: On bare semiconductors, mercury forms a Schottky barrier that makes possible C-V measurements and doping profile analysis. The CV tests are conducted to check carrier concentration uniformity of epitaxial layers.

Technical features and specifications:
a) Measurement up to 200 mm wafer in manual mode point by point data acqusition. b) Electrical probe with upto 1000 V test loop

Charges:
NA

Instrument Manufacturer URL: https://www.mdc-europe.com/

Detailed Specifications:
https://www.mdc-europe.com/mdc-equipments/mercury-probe/#more-561

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